| 
Category
 | 
Article
 | 
| 
Author
 | 
Ogawa H.:K. Ishikawa:C. Inomata:S. Fujimura
 | 
| 
Article Title
 | 
Initial stage of native oxide growth on hydrogen terminated Si(111) surface
 | 
| 
Institution
 | 
Journal of Applied Physics
 | 
| 
Volume
 | 
vol.79
 | 
| 
Number
 | 
 | 
| 
Page
 | 
472
 | 
| 
Date
 | 
1996
 | 
| 
Abstract
 | 
 | 
| 
Notes
 | 
 | 
| 
URL
 | 
 | 
| 
Label
 | 
技術経営
 | 
| 
Register date
 | 
1996/12/31
 |