| 
Category
 | 
Article
 | 
| 
Author
 | 
Fukata,N.:S. Sasaki:S. Fujimura:H. Haneda:K. Murakami
 | 
| 
Article Title
 | 
Hydrogen passivation of donors and hydrogen states in heavily doped n-type silicon
 | 
| 
Institution
 | 
Japan Journal of Applied Physics
 | 
| 
Volume
 | 
vol.35
 | 
| 
Number
 | 
 | 
| 
Page
 | 
3937
 | 
| 
Date
 | 
1996
 | 
| 
Abstract
 | 
 | 
| 
Notes
 | 
 | 
| 
URL
 | 
 | 
| 
Label
 | 
技術経営
 | 
| 
Register date
 | 
1996/12/31
 |